Efficient Orbitronic Terahertz Emission Based on CoPt Alloy.

ballistic decoherence length efficient orbital terahertz emitter orbital‐to‐charge conversion

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
19 Jun 2024
Historique:
revised: 17 06 2024
received: 21 03 2024
medline: 19 6 2024
pubmed: 19 6 2024
entrez: 19 6 2024
Statut: aheadofprint

Résumé

Orbitronic devices operate by manipulating orbitally polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in a ferromagnet such as Ni and converted into ultrafast charge currents via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitters based on Ni is still much weaker than that of the typical spintronic terahertz emitter. Here, we report a more efficient light-induced generation of orbital current from a CoPt alloy, and the terahertz emission from CoPt/Cu/MgO is comparable to that of benchmark spintronic terahertz emitters. By varying the composition of the CoPt alloy, the thickness of Cu, and the capping layer, we confirm that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu, followed by subsequent orbital-to-charge conversion due to the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the efficient orbital current generation in CoPt alloy, paving the way for efficient orbital terahertz emitters. This article is protected by copyright. All rights reserved.

Identifiants

pubmed: 38896111
doi: 10.1002/adma.202404174
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2404174

Informations de copyright

This article is protected by copyright. All rights reserved.

Auteurs

Yongshan Liu (Y)

National Key Lab of Spintronics, Institute of International Innovation, Beihang University, Yuhang District, Hangzhou, 311115, China.
Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China.

Yong Xu (Y)

National Key Lab of Spintronics, Institute of International Innovation, Beihang University, Yuhang District, Hangzhou, 311115, China.
Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Albert Fert (A)

Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France.

Henri-Yves Jaffrès (HY)

Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France.

Tianxiao Nie (T)

Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.

Sylvain Eimer (S)

National Key Lab of Spintronics, Institute of International Innovation, Beihang University, Yuhang District, Hangzhou, 311115, China.

Xiaoqiang Zhang (X)

Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China.

Weisheng Zhao (W)

National Key Lab of Spintronics, Institute of International Innovation, Beihang University, Yuhang District, Hangzhou, 311115, China.
Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China.

Classifications MeSH