Compliance-free, analog RRAM devices based on SnO
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
19 Jun 2024
19 Jun 2024
Historique:
received:
28
03
2023
accepted:
11
06
2024
medline:
20
6
2024
pubmed:
20
6
2024
entrez:
19
6
2024
Statut:
epublish
Résumé
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching (RS) materials. Among different oxides, tin oxide (SnO
Identifiants
pubmed: 38898073
doi: 10.1038/s41598-024-64662-9
pii: 10.1038/s41598-024-64662-9
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
14163Subventions
Organisme : Science and Engineering Research Board
ID : Start-up Research Grant (SRG) (SRG/2021/000762)
Organisme : Science and Engineering Research Board
ID : Start-up Research Grant (SRG) (SRG/2021/000762)
Organisme : MSCA EC
ID : Grant Agreement No. 224 (101029535- MENESIS)
Organisme : Engineering and Physical Sciences Research Council
ID : EPSRC FORTE Programme Grant (EP/R024642/2)
Organisme : Engineering and Physical Sciences Research Council
ID : EPSRC FORTE Programme Grant (EP/R024642/2)
Organisme : Engineering and Physical Sciences Research Council
ID : EPSRC FORTE Programme Grant (EP/R024642/2)
Organisme : Royal Academy of Engineering
ID : RAEng Chair in Emerging Technologies (CiET1819/2/93).
Informations de copyright
© 2024. The Author(s).
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