Interfacial Distortion of Sb
2D materials
Sb2Te3−Sb2Se3
atomic layer deposition
interface engineering
transport property
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
25 Jun 2024
25 Jun 2024
Historique:
medline:
26
6
2024
pubmed:
26
6
2024
entrez:
26
6
2024
Statut:
aheadofprint
Résumé
Atomic layer deposition (ALD) is an effective technique for depositing thin films with precise control of layer thickness and functional properties. In this work, Sb
Identifiants
pubmed: 38919047
doi: 10.1021/acsnano.3c13152
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM