Optically driven intelligent computing with ZnO memristor.
All-optically controlling
Artificial vision
Logic-in-memory
Memristor
Nonvolatile neuromorphic computing
ZnO thin film
Journal
Fundamental research
ISSN: 2667-3258
Titre abrégé: Fundam Res
Pays: China
ID NLM: 9918821688906676
Informations de publication
Date de publication:
Jan 2024
Jan 2024
Historique:
received:
15
04
2022
revised:
13
06
2022
accepted:
22
06
2022
medline:
25
7
2022
pubmed:
25
7
2022
entrez:
27
6
2024
Statut:
epublish
Résumé
Artificial vision is crucial for most artificial intelligence applications. Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors, memories, and processors, which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy. Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory (ISCM) are key candidates for solving such challenges and therefore attract increasing attention. At present, the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices. Here, we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere. This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation, owing to its ability to reversibly tune the memconductance with light. Moreover, the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism. Hence, this study is an important step towards the next generation of artificial visual systems.
Identifiants
pubmed: 38933832
doi: 10.1016/j.fmre.2022.06.019
pii: S2667-3258(22)00296-5
pmc: PMC11197590
doi:
Types de publication
Journal Article
Langues
eng
Pagination
158-166Informations de copyright
© 2022 The Authors. Publishing Services by Elsevier B.V. on behalf of KeAi Communications Co. Ltd.
Déclaration de conflit d'intérêts
The authors declare that they have no conflicts of interest in this work.