Maltose Additive Enables Compacted Deposition of Zn Ions for Stabilizing the Zn Anode.

Zn dendrites aqueous zinc-ion batteries electrolyte additive interface maltose

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
28 Jun 2024
Historique:
medline: 28 6 2024
pubmed: 28 6 2024
entrez: 28 6 2024
Statut: aheadofprint

Résumé

Aqueous zinc-ion batteries (AZIBs) have emerged as one of the most promising energy storage technologies due to their high safety and cost-effectiveness. However, several challenges associated with the Zn metal anode, such as dendrite growth, corrosion, and hydrogen evolution reaction (HER), have hindered further applications of AZIBs. Herein, maltose (MT) is used as a functional electrolyte additive to protect the Zn metal electrode during the interface deposition process. The additive can effectively affect the interface of Zn metal, suppressing HER and corrosion reactions. Moreover, it facilitates the uniform deposition of Zn by inducing Zn

Identifiants

pubmed: 38940306
doi: 10.1021/acsami.4c07076
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Huan Liu (H)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Hong Deng (H)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Shanshan Liu (S)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Yuhang Hou (Y)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Shouyue Wang (S)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Shengyu Liang (S)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Taiding Xu (T)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Qian Shen (Q)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Sheng Li (S)

School of Flexible Electronics (Future Technologies), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Jingxia Qiu (J)

School of Physical and Mathematical Sciences, Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.

Classifications MeSH