Terahertz-based optoelectronic properties of ZnS quantum dot-polymer composites: For device applications.

Fluorescence Optical impedance Refractive Index THz ZnS

Journal

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy
ISSN: 1873-3557
Titre abrégé: Spectrochim Acta A Mol Biomol Spectrosc
Pays: England
ID NLM: 9602533

Informations de publication

Date de publication:
24 Jun 2024
Historique:
received: 19 12 2023
revised: 07 06 2024
accepted: 19 06 2024
medline: 4 7 2024
pubmed: 4 7 2024
entrez: 3 7 2024
Statut: aheadofprint

Résumé

Terahertz (THz) technology integration with nanomaterials is receiving excellent attention for next-generation applications, including enhanced imaging and communication. The excellent optical properties in THz domain can lead to preparation of low-cost CMOS camera which can convert THz radiation into optical signal in very efficient manner. In the present study, we have studied the properties of Zinc Sulfide quantum dots (ZnS QDs) embedded with Polyvinyl Alcohol (PVA) composites films using THz Signal at room temperature. The optical characterizations such as refractive index, absorption coefficients and dielectric constants of these samples were measured in the 0.1-2.0 THz range. Additionally, optical impedance, surface roughness, and reflection coefficient in TE and TM mode between 0.1 and 2.0 THz range were determined for these samples based on surface roughness-based reflection and scattering properties. The surface roughness factor was used to measure the optical impedance of the ZnS QDs based polymer films. The measured values of the absorption coefficient at 266 nm are compared with THz radiation, and the refractive indices of these samples range from 1.75 to 2.0. Finally, these samples were subjected to UV light excitation (λ

Identifiants

pubmed: 38959691
pii: S1386-1425(24)00863-1
doi: 10.1016/j.saa.2024.124697
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

124697

Informations de copyright

Copyright © 2024. Published by Elsevier B.V.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Chandan Ghorui (C)

Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana 500046, India.

Partha Kumbhakar (P)

Nanoscience Laboratory, Dept. of Physics, National Institute of Technology Durgapur, West Bengal 713209, India; Department of Physics and Electronics, CHRIST (Deemed to be University), Bengaluru, Karnataka, 560029, India.

Arjun Vs Kidavu (A)

Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana 500046, India.

Pathik Kumbhakar (P)

Nanoscience Laboratory, Dept. of Physics, National Institute of Technology Durgapur, West Bengal 713209, India. Electronic address: pkumbhakar.phy@nitdgp.ac.in.

A K Chaudhary (AK)

Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana 500046, India. Electronic address: akcphys@gmail.com.

Classifications MeSH