InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.
Selective area epitaxy
quantum dot chain
semiconductor nanowire
Journal
Nanotechnology
ISSN: 1361-6528
Titre abrégé: Nanotechnology
Pays: England
ID NLM: 101241272
Informations de publication
Date de publication:
04 Jul 2024
04 Jul 2024
Historique:
medline:
5
7
2024
pubmed:
5
7
2024
entrez:
4
7
2024
Statut:
aheadofprint
Résumé
Increasing quantum confinement in semiconductor quantum dot systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build quantum dot chains. Starting from 15 nm-thick and 65 nm-wide in-plane In
Identifiants
pubmed: 38964286
doi: 10.1088/1361-6528/ad5f34
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Informations de copyright
© 2024 IOP Publishing Ltd.