Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin-Lead Alloyed Perovskite Nanocrystals.

Ruddlesden−Popper planar faults deep-level point defect mixed tin−lead perovskite nanocrystals photoluminescence quenching structural disorder

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
21 Jul 2024
Historique:
medline: 21 7 2024
pubmed: 21 7 2024
entrez: 21 7 2024
Statut: aheadofprint

Résumé

The development of tin-lead alloyed halide perovskite nanocrystals (PNCs) is highly desirable for creating ultrastable, eco-friendly optoelectronic applications. However, the current incorporation of tin into the lead matrix results in severe photoluminescence (PL) quenching. To date, the precise atomic-scale structural origins of this quenching are still unknown, representing a significant barrier to fully realizing the potential of these materials. Here, we uncover the distinctive defect-related microstructures responsible for PL quenching using atomic-resolution scanning transmission electron microscopy and theoretical calculations. Our findings reveal an increase in point defects and Ruddlesden-Popper (RP) planar faults with increasing tin content. Notably, the point defects include a spectrum of vacancies and previously overlooked antisite defects with bromide vacancies and cation antisite defects emerging as the primary contributors to deep-level defects. Furthermore, the RP planar faults exhibit not only the typical rock-salt stacking pattern found in pure Pb-based PNCs but also previously undocumented microstructures rich in bromide vacancies and deep-level cation antisite defects. Direct strain imaging uncovers severe lattice distortion and significant inhomogeneous strain distributions caused by point defect aggregation, potentially breaking the local force balance and driving RP planar fault formation via lattice slippage. Our work illuminates the nature and evolution of defects in tin-lead alloyed halide perovskite nanocrystals and their profound impact on PL quenching, providing insights that support future material strategies in the development of less toxic tin-lead alloyed perovskite nanocrystals.

Identifiants

pubmed: 39033511
doi: 10.1021/acsnano.4c01674
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Dandan Wang (D)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Yusheng Li (Y)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Yongge Yang (Y)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Yao Guo (Y)

School of Materials Science and Engineering, Henan Joint International Research Laboratory of Nanocomposite Sensing Materials, Anyang Institute of Technology, Anyang 455000, China.

Huiyun Wei (H)

School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.

Feng Liu (F)

Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China.

Chao Ding (C)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Yuyao Wei (Y)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Dong Liu (D)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Hua Li (H)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Guozheng Shi (G)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Shikai Chen (S)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Hongshi Li (H)

Institute of New Energy Materials Chemistry, School of Materials Science and Engineering, Nankai University, TongYan street 38, Jinnan District, Tianjin 300350, China.

Akihito Fuchimoto (A)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Jing Xia (J)

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

Shuzi Hayase (S)

i-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, 1-5-1 Chofugaoka, Cho-fu, Tokyo 182-8585, Japan.

Qing Shen (Q)

Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan.

Classifications MeSH