Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC.

Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (