Effect of Ultraviolet Radiation on Properties of Ge


Journal

Langmuir : the ACS journal of surfaces and colloids
ISSN: 1520-5827
Titre abrégé: Langmuir
Pays: United States
ID NLM: 9882736

Informations de publication

Date de publication:
30 Jul 2024
Historique:
medline: 30 7 2024
pubmed: 30 7 2024
entrez: 30 7 2024
Statut: aheadofprint

Résumé

With the expanding utilization of space technology, the stability of electronic components' performance in radiation environments has garnered significant attention. In this study, we prepared Ge

Identifiants

pubmed: 39078028
doi: 10.1021/acs.langmuir.4c01672
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Cheng Wang (C)

School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China.

Yifeng Hu (Y)

School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China.

Xiaoqin Zhu (X)

School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China.

Classifications MeSH