The synergistic effect of Cd-doped and S-vacancies in Cd
Doping engineering
Ternary metal sulfides
Triethylamine sensor
Journal
Talanta
ISSN: 1873-3573
Titre abrégé: Talanta
Pays: Netherlands
ID NLM: 2984816R
Informations de publication
Date de publication:
29 Jul 2024
29 Jul 2024
Historique:
received:
12
06
2024
revised:
18
07
2024
accepted:
26
07
2024
medline:
31
7
2024
pubmed:
31
7
2024
entrez:
30
7
2024
Statut:
aheadofprint
Résumé
Ternary metal sulfides with suitable band gaps, high physicochemical stability, and unique two-dimensional (2D) nanostructures are expected to be the next-generation high-performance gas sensors following the MOS type. Doping engineering is utilized as an effective strategy to improve the semiconductor surface activity and enhance its gas-sensitive properties. In this paper, the energy band structure and surface chemical oxygen of ZnIn
Identifiants
pubmed: 39079433
pii: S0039-9140(24)01004-X
doi: 10.1016/j.talanta.2024.126625
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
126625Informations de copyright
Copyright © 2024 Elsevier B.V. All rights reserved.
Déclaration de conflit d'intérêts
Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.