The synergistic effect of Cd-doped and S-vacancies in Cd

Doping engineering Ternary metal sulfides Triethylamine sensor

Journal

Talanta
ISSN: 1873-3573
Titre abrégé: Talanta
Pays: Netherlands
ID NLM: 2984816R

Informations de publication

Date de publication:
29 Jul 2024
Historique:
received: 12 06 2024
revised: 18 07 2024
accepted: 26 07 2024
medline: 31 7 2024
pubmed: 31 7 2024
entrez: 30 7 2024
Statut: aheadofprint

Résumé

Ternary metal sulfides with suitable band gaps, high physicochemical stability, and unique two-dimensional (2D) nanostructures are expected to be the next-generation high-performance gas sensors following the MOS type. Doping engineering is utilized as an effective strategy to improve the semiconductor surface activity and enhance its gas-sensitive properties. In this paper, the energy band structure and surface chemical oxygen of ZnIn

Identifiants

pubmed: 39079433
pii: S0039-9140(24)01004-X
doi: 10.1016/j.talanta.2024.126625
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

126625

Informations de copyright

Copyright © 2024 Elsevier B.V. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Yizhuo Fan (Y)

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130012, PR China. Electronic address: fanyz97@163.com.

Jian Fang (J)

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130012, PR China.

Wei Wang (W)

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130012, PR China.

Qilin Wang (Q)

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130012, PR China.

Dali Liu (D)

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, PR China.

Yu Chen (Y)

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, PR China. Electronic address: zhuq1226@aliyun.com.

Shengping Ruan (S)

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130012, PR China. Electronic address: ruansp@jlu.edu.cn.

Classifications MeSH