Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p-n junction cell using SCAP-1D tool.


Journal

RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657

Informations de publication

Date de publication:
26 Jul 2024
Historique:
received: 30 03 2024
accepted: 22 07 2024
medline: 31 7 2024
pubmed: 31 7 2024
entrez: 31 7 2024
Statut: epublish

Résumé

Initially hydrogenated silicon (Si:H) thin films have been deposited using a plasma-enhanced chemical vapor deposition technique (PECVD) using silane (SiH

Identifiants

pubmed: 39081655
doi: 10.1039/d4ra02429j
pii: d4ra02429j
pmc: PMC11287241
doi:

Types de publication

Journal Article

Langues

eng

Pagination

23873-23885

Informations de copyright

This journal is © The Royal Society of Chemistry.

Déclaration de conflit d'intérêts

The authors declare that they have no conflicts of interest.

Auteurs

Vijay Kumar Gill (VK)

Department of Electronics and Communication Engineering, Manav Rachna University Aravalli Hills Faridabad Haryana - 121004 India shivkumardixit.7@gmail.com.

Sucheta Juneja (S)

CSIR Network of Institutes for Solar Energy, CSIR - National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India suchetajuneja@gmail.com.

Shiv Kumar Dixit (SK)

Department of Electronics and Communication Engineering, Manav Rachna University Aravalli Hills Faridabad Haryana - 121004 India shivkumardixit.7@gmail.com.

Shruti Vashist (S)

Department of Electronics and Communication Engineering, Manav Rachna University Aravalli Hills Faridabad Haryana - 121004 India shivkumardixit.7@gmail.com.

Sushil Kumar (S)

CSIR Network of Institutes for Solar Energy, CSIR - National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India suchetajuneja@gmail.com.

Classifications MeSH