Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p-n junction cell using SCAP-1D tool.
Journal
RSC advances
ISSN: 2046-2069
Titre abrégé: RSC Adv
Pays: England
ID NLM: 101581657
Informations de publication
Date de publication:
26 Jul 2024
26 Jul 2024
Historique:
received:
30
03
2024
accepted:
22
07
2024
medline:
31
7
2024
pubmed:
31
7
2024
entrez:
31
7
2024
Statut:
epublish
Résumé
Initially hydrogenated silicon (Si:H) thin films have been deposited using a plasma-enhanced chemical vapor deposition technique (PECVD) using silane (SiH
Identifiants
pubmed: 39081655
doi: 10.1039/d4ra02429j
pii: d4ra02429j
pmc: PMC11287241
doi:
Types de publication
Journal Article
Langues
eng
Pagination
23873-23885Informations de copyright
This journal is © The Royal Society of Chemistry.
Déclaration de conflit d'intérêts
The authors declare that they have no conflicts of interest.