Investigation of mechanical behavior of porous carbon-based matrix by molecular dynamics simulation: Effects of Si doping.

Atomic doping Carbon-based matrix Molecular dynamics simulation Porous materials Silicon Stress-strain

Journal

Journal of molecular graphics & modelling
ISSN: 1873-4243
Titre abrégé: J Mol Graph Model
Pays: United States
ID NLM: 9716237

Informations de publication

Date de publication:
31 Jul 2024
Historique:
received: 26 03 2024
revised: 28 07 2024
accepted: 29 07 2024
medline: 5 8 2024
pubmed: 5 8 2024
entrez: 4 8 2024
Statut: aheadofprint

Résumé

Understanding the mechanical properties of porous carbon-based materials can lead to advancements in various applications, including energy storage, filtration, and lightweight structural components. Also, investigating how silicon doping affects these materials can help optimize their mechanical properties, potentially improving strength, durability, and other performance metrics. This research investigated the effects of atomic doping (Si particle up to 10 %) on the mechanical properties of the porous carbon matrix using molecular dynamics methods. Young's modulus, ultimate strength, radial distribution function, interaction energy, mean square displacement and potential energy of designed samples were reported. MD outputs predict the Si doping process improved the mechanical performance of porous structures. Numerically, Young's modulus of the C-based porous matrix increased from 234.33 GPa to 363.82 GPa by 5 % Si inserted into a pristine porous sample. Also, the ultimate strength increases from 48.54 to 115.93 GPa with increasing Si doping from 1 % to 5 %. Silicon doping enhances the bonding strength and reduces defects in the carbon matrix, leading to improved stiffness and load-bearing capacity. This results in significant increases in mechanical performance. However, excess Si may disrupt the optimal bonding network, leading to weaker connections within the matrix. Also, considering the negative value of potential energy in different doping percentages, it can be concluded that the amount of doping added up to 10 % does not disturb the initial structure and stability of the system, and the structure still has structural stability. So, we expected our introduced atomic samples to be used in actual applications.

Identifiants

pubmed: 39098148
pii: S1093-3263(24)00136-0
doi: 10.1016/j.jmgm.2024.108836
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

108836

Informations de copyright

Copyright © 2024 Elsevier Inc. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Weifeng Ma (W)

School of Mathematics and Information Sciences, Neijiang Normal University, Neijiang, 641000, China. Electronic address: kasulazimmermanzq1557@gmail.com.

Ali Basem (A)

Faculty of Engineering, Warith Al-Anbiyaa University, Karbala, 56001, Iraq.

Soheil Salahshour (S)

Faculty of Engineering and Natural Sciences, Istanbul Okan University, Istanbul, Turkey; Faculty of Engineering and Natural Sciences, Bahcesehir University, Istanbul, Turkey; Department of Computer Science and Mathematics, Lebanese American University, Beirut, Lebanon.

Zainab Younus Abdullah (ZY)

Department of Dental Technology, Al-Amarah University College, Maysan, Iraq.

Mohammed Al-Bahrani (M)

Chemical Engineering and Petroleum Industries Department, Al-Mustaqbal University, Babylon, 51001, Iraq.

Raman Kumar (R)

School of Mechanical Engineering, Rayat Bahra University, Kharar, Punjab, 140103, India; Faculty of Engineering, Sohar University, PO Box 44, Sohar, PCI 311, Oman.

Sh Esmaeili (S)

Faculty of Physics, Semnan University, P.O. Box: 35195-363, Semnan, Iran. Electronic address: shadi.esmaili@iaukhsh.ac.ir.

Classifications MeSH