Local strain inhomogeneities during electrical triggering of a metal-insulator transition revealed by X-ray microscopy.

X-ray microdiffraction dark-field X-ray microscopy in operando microscopy metal–insulator transition resistive switching

Journal

Proceedings of the National Academy of Sciences of the United States of America
ISSN: 1091-6490
Titre abrégé: Proc Natl Acad Sci U S A
Pays: United States
ID NLM: 7505876

Informations de publication

Date de publication:
20 Aug 2024
Historique:
medline: 15 8 2024
pubmed: 15 8 2024
entrez: 15 8 2024
Statut: ppublish

Résumé

Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of the material. Using X-ray microdiffraction and dark-field X-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a pronounced, discontinuous structural transition coinciding with the MIT. Diffraction measurements further reveal evidence of unique features associated with MIT triggering including lattice distortions, tilting, and twinning, which indicate structural nonuniformity of both low- and high-resistance regions inside the switching device. Such lattice deformations do not occur under equilibrium, zero-voltage conditions, highlighting the qualitative difference between states achieved through increasing temperature and applying voltage in nonlinear electrothermal materials. Electrically induced strain, lattice distortions, and twinning could have important contributions in the MIT triggering process and drive the material into nonequilibrium states, providing an unconventional pathway to explore the phase space in strongly correlated electronic systems.

Identifiants

pubmed: 39145937
doi: 10.1073/pnas.2317944121
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2317944121

Subventions

Organisme : DOE | Office of Science (SC)
ID : DESC0019273
Organisme : DOE | Office of Science (SC)
ID : DE-AC02-05CH11231
Organisme : DOE | Office of Science (SC)
ID : DE-AC02-06CH11357

Déclaration de conflit d'intérêts

Competing interests statement:The authors declare no competing interest.

Auteurs

Pavel Salev (P)

Department of Physics and Astronomy, University of Denver, Denver, CO 80210.

Elliot Kisiel (E)

Department of Physics, University of California San Diego, La Jolla, CA 92093.
X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439.

Dayne Sasaki (D)

Department of Materials Science and Engineering, University of California Davis, Davis, CA 95616.

Brandon Gunn (B)

Department of Physics, University of California San Diego, La Jolla, CA 92093.

Wei He (W)

Department of Physics, University of California San Diego, La Jolla, CA 92093.

Mingzhen Feng (M)

Department of Materials Science and Engineering, University of California Davis, Davis, CA 95616.

Junjie Li (J)

Department of Physics, University of California San Diego, La Jolla, CA 92093.

Nobumichi Tamura (N)

Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.

Ishwor Poudyal (I)

X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439.

Zahirul Islam (Z)

X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439.

Yayoi Takamura (Y)

Department of Materials Science and Engineering, University of California Davis, Davis, CA 95616.

Alex Frano (A)

Department of Physics, University of California San Diego, La Jolla, CA 92093.

Ivan K Schuller (IK)

Department of Physics, University of California San Diego, La Jolla, CA 92093.

Classifications MeSH