Photonic topological phase transition induced by material phase transition.


Journal

Science advances
ISSN: 2375-2548
Titre abrégé: Sci Adv
Pays: United States
ID NLM: 101653440

Informations de publication

Date de publication:
23 Aug 2024
Historique:
medline: 23 8 2024
pubmed: 23 8 2024
entrez: 23 8 2024
Statut: ppublish

Résumé

Photonic topological insulators (PTIs) have been proposed as an analogy to topological insulators in electronic systems. In particular, two-dimensional PTIs have gained attention for the integrated circuit applications. However, controlling the topological phase after fabrication is difficult because the photonic topology requires the built-in specific structures. This study experimentally demonstrates the band inversion in two-dimensional PTI induced by the phase transition of deliberately designed nanopatterns of a phase change material, Ge

Identifiants

pubmed: 39178256
doi: 10.1126/sciadv.adp7779
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

eadp7779

Auteurs

Takahiro Uemura (T)

Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, 152-8550, Tokyo, Japan.
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Yuto Moritake (Y)

Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, 152-8550, Tokyo, Japan.

Taiki Yoda (T)

Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, 152-8550, Tokyo, Japan.
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Hisashi Chiba (H)

Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, 152-8550, Tokyo, Japan.
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Yusuke Tanaka (Y)

NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Masaaki Ono (M)

NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.
NTT Nanophotonics Center, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Eiichi Kuramochi (E)

NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.
NTT Nanophotonics Center, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Masaya Notomi (M)

Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, 152-8550, Tokyo, Japan.
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.
NTT Nanophotonics Center, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Kanagawa, Japan.

Classifications MeSH