In-Materia Annealing and Combinatorial Optimization Based on Vertical Memristive Array.

combinatorial optimization in‐materia annealing matrix multiplication simulated annealing vertical structure

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
28 Aug 2024
Historique:
revised: 04 08 2024
received: 15 07 2024
medline: 28 8 2024
pubmed: 28 8 2024
entrez: 28 8 2024
Statut: aheadofprint

Résumé

Due to its area and energy efficiency, a memristive crossbar array (CBA) has been extensively studied for various combinatorial optimization applications, from network problems to circuit design. However, conventional approaches include heavily burdening software fine-tuning for the annealing process. Instead, this study introduces the "in-materia annealing" method, where the inter-layer interference of vertically stacked memristive CBA is utilized as an annealing method. When mapping combinatorial optimization problems into the configuration layer of the CBA, exponentially decaying annealing profiles are generated in nearby noise layers. Moreover, in-materia annealing profiles can be controlled by changing compliance current, read voltage, and read pulse width. Therefore, the annealing profiles can be arbitrarily controlled and generated individually for each cell, providing rich noise sources to solve the problem efficiently. Consequently, the experimental and simulation of Max-Cut and weighted Max-Cut problems achieve notable results with the minimum software burden.

Identifiants

pubmed: 39194394
doi: 10.1002/adma.202410191
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2410191

Subventions

Organisme : National Research Foundation of Korea
ID : 2020R1A3B2079882

Informations de copyright

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Références

K. Tanahashi, S. Takayanagi, T. Motohashi, S. Tanaka, J. Phys. Soc. Jpn. 2019, 88, 061010.
A. Lucas, Front. Phys. 2014, 2, 5.
N. Mohseni, P. L. McMahon, T. Byrnes, Nat. Rev. Phys. 2022, 4, 363.
S. Morita, H. Nishimori, J Math Phys. 2008, 49, 125210.
P. Hauke, H. G. Katzgraber, W. Lechner, H. Nishimori, W. D. Oliver, Rep Prog Phys 2020, 83, 054401.
A. Schrijver, Handbooks in Operations Research and Management Science, Vol. 12, Elsevier, New York 2005.
S. Held, B. Korte, D. Rautenbach, J. Vygen, J. Comb. Optim. 2011, 31, 33.
S. Anand, S. Saravanasankar, P. Subbaraj, Comput. Optim. Appl. 2012, 52, 667.
N. Mu, Y. Wang, Z. S. Chen, P. Xin, M. Deveci, W. Pedrycz, Environ. Sci. Pollut. Res. 2023, 30, 47580.
S. Yarkoni, E. Raponi, T. Bäck, S. Schmitt, Rep. Prog. Phys. 2022, 85, 104001.
S. Khuri, T. Back, J. Heitkotter, ACM Conference on Computer Science 1994, pp. 66–73.
D. Willsch, M. Willsch, H. De Raedt, K. Michielsen, Comput. Phys. Commun. 2020, 248, 107006.
S. Okada, M. Ohzeki, M. Terabe, S. Taguchi, Sci. Rep. 2019, 9, 2098.
S. Kirkpatrick, C. D. Gelatt, M. P. Vecchi, Science 1983, 220, 671.
L. Ingber, Math Comput. Model. 1993, 18, 29.
Y. He, IEEE Trans. Neural Netw. 2002, 13, 1526.
L. Chen, K. Aihara, Neural Netw. 1995, 8, 915.
J. Hopfield, Scholarpedia 2007, 2, 1977.
H. Ramsauer, B. Schäfl, J. Lehner, P. Seidl, M. Widrich, T. Adler, L. Gruber, M. Holzleitner, D. Kreil, M. Kopp, G. Klambauer, J. Brandstetter, S. Hochreiter, in ICLR 2021 –9th Int. Conf. on Learning Representations, 2021.
A. K. Katsaggelos, IEEE Trans Image Process 1992, 1, 49.
G. S. Kim, H. Song, Y. K. Lee, J. H. Kim, W. Kim, T. H. Park, H. J. Kim, K. Min Kim, C. S. Hwang, ACS Appl. Mater. Interfaces 2019, 11, 47063.
M. Rao, H. Tang, J. Wu, W. Song, M. Zhang, W. Yin, Y. Zhuo, F. Kiani, B. Chen, X. Jiang, H. Liu, H. Y. Chen, R. Midya, F. Ye, H. Jiang, Z. Wang, M. Wu, M. Hu, H. Wang, Q. Xia, N. Ge, J. Li, J. J. Yang, Nature 2023, 615, 823.
C. Liu, M. Hu, J. P. Strachan, H. H. Li, in Proceedings‐Design Automation Conference 2017, pp. 1–6.
F. Cai, S. Kumar, T. Van Vaerenbergh, X. Sheng, R. Liu, C. Li, Z. Liu, M. Foltin, S. Yu, Q. Xia, J. J. Yang, R. Beausoleil, W. D. Lu, J. P. Strachan, Nat. Electron. 2020, 3, 409.
K. Yang, Q. Duan, Y. Wang, T. Zhang, Y. Yang, R. Huang, Sci. Adv. 2020, 6, eaba9901.
M. Jiang, K. Shan, C. He, C. Li, Nat. Commun. 2023, 14, 5927.
M. X. Goemans, D. P. Williamson, J. ACM 1995, 42, 1115.
C. W. Commander, in Encyclopedia of Optimization, Springer Science & Business Media, Heidelberg, Germany 2008.
J. H. Yoon, S. J. Song, I. H. Yoo, J. Y. Seok, K. J. Yoon, D. E. Kwon, T. H. Park, C. S. Hwang, Adv. Funct. Mater. 2014, 24, 5086.
J. H. Yoon, S. Yoo, S. J. Song, K. J. Yoon, D. E. Kwon, Y. J. Kwon, T. H. Park, H. J. Kim, X. L. Shao, Y. Kim, C. S. Hwang, ACS Appl. Mater. Interfaces 2016, 8, 18215.
S. S. Kim, S. K. Yong, J. Kim, J. M. Choi, T. W. Park, H. Y. Kim, H. J. Kim, C. S. Hwang, Adv. Electron. Mater. 2023, 9, 2200998.
Y. S. Chen, B. Chen, B. Gao, L. F. Liu, X. Y. Liu, J. F. Kang, J. Appl. Phys. 2013, 113, 16450.
S. Roy, G. Niu, Q. Wang, Y. Wang, Y. Zhang, H. Wu, S. Zhai, P. Shi, S. Song, Z. Song, Z. G. Ye, C. Wenger, T. Schroeder, Y. H. Xie, X. Meng, W. Luo, W. Ren, ACS Appl. Mater. Interfaces 2020, 12, 10648.
S. Yu, B. Gao, H. Dai, B. Sun, L. Liu, X. Liu, R. Han, J. Kang, B. Yu, Electrochem. Solid‐State Lett. 2010, 13, H36.
E. Perez, A. Grossi, C. Zambelli, P. Olivo, R. Roelofs, C. Wenger, IEEE Electron Device Lett. 2017, 38, 175.
G. Congedo, C. Wiemer, A. Lamperti, E. Cianci, A. Molle, F. G. Volpe, S. Spiga, Thin Solid Films 2013, 533, 9.
S. Mandra, A. Akbari Asanjan, L. Brady, A. Lott, D. E. Bernal Neira, H. Munoz Bauza, [Computer software], 2023, https://github.com/nasa/pysa (accessed: August 2024).
Y. Luo, X. Peng, S. Yu, ACM Int. Conf. Proceeding Series 2019, pp. 1–7.

Auteurs

Soo Hyung Lee (SH)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Sunwoo Cheong (S)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Jea Min Cho (JM)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Néstor Ghenzi (N)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Dong Hoon Shin (DH)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Yoon Ho Jang (YH)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Janguk Han (J)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Tae Won Park (TW)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Dong Yun Kim (DY)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Sung Keun Shim (SK)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Joon-Kyu Han (JK)

System Semiconductor Engineering and Department of Electronic Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Republic of Korea.

Seung Soo Kim (SS)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Cheol Seong Hwang (CS)

Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Classifications MeSH