Strain fingerprinting of exciton valley character in 2D semiconductors.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
30 Aug 2024
30 Aug 2024
Historique:
received:
01
03
2024
accepted:
30
07
2024
medline:
31
8
2024
pubmed:
31
8
2024
entrez:
30
8
2024
Statut:
epublish
Résumé
Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe
Identifiants
pubmed: 39214968
doi: 10.1038/s41467-024-51195-y
pii: 10.1038/s41467-024-51195-y
pmc: PMC11364664
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
7546Subventions
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : TRR 227 (project B08)
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : Priority Programme SPP 2244 2DMP (project BO 5142/5)
Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : project 05K22KE3
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : Emmy Noether Initiative (project-ID 433878606)
Organisme : Austrian Science Fund (Fonds zur Förderung der Wissenschaftlichen Forschung)
ID : TU-DX (DOC 142-N)
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : SFB 1083 (project B9)
Organisme : Deutsche Forschungsgemeinschaft (German Research Foundation)
ID : 512604469
Informations de copyright
© 2024. The Author(s).
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