Entangling gates on degenerate spin qubits dressed by a global field.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
03 Sep 2024
03 Sep 2024
Historique:
received:
16
01
2024
accepted:
21
08
2024
medline:
4
9
2024
pubmed:
4
9
2024
entrez:
3
9
2024
Statut:
epublish
Résumé
Semiconductor spin qubits represent a promising platform for future large-scale quantum computers owing to their excellent qubit performance, as well as the ability to leverage the mature semiconductor manufacturing industry for scaling up. Individual qubit control, however, commonly relies on spectral selectivity, where individual microwave signals of distinct frequencies are used to address each qubit. As quantum processors scale up, this approach will suffer from frequency crowding, control signal interference and unfeasible bandwidth requirements. Here, we propose a strategy based on arrays of degenerate spins coherently dressed by a global control field and individually addressed by local electrodes. We demonstrate simultaneous on-resonance driving of two degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight how dressing can overcome the fragility of entangling gates between superposition states and increase their noise robustness. These results constitute a paradigm shift in qubit control in order to overcome frequency crowding in large-scale quantum computing.
Identifiants
pubmed: 39227618
doi: 10.1038/s41467-024-52010-4
pii: 10.1038/s41467-024-52010-4
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
7656Informations de copyright
© 2024. The Author(s).
Références
Fowler, A. G., Mariantoni, M., Martinis, J. M. & Cleland, A. N. Surface codes: towards practical large-scale quantum computation. Phys. Rev. A 86, 032324 (2012).
doi: 10.1103/PhysRevA.86.032324
Franke, D. P., Clarke, J. S., Vandersypen, L. M. & Veldhorst, M. Rent’s rule and extensibility in quantum computing. Microprocessors Microsyst. 67, 1–7 (2019).
doi: 10.1016/j.micpro.2019.02.006
Cifuentes, J. D. et al. Bounds to electron spin qubit variability for scalable CMOS architectures. Nat. Commun. 15, 4299 (2024).
doi: 10.1038/s41467-024-48557-x
pubmed: 38769086
pmcid: 11106088
Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133–137 (1998).
doi: 10.1038/30156
Seedhouse, A. E. et al. Quantum computation protocol for dressed spins in a global field. Phys. Rev. B 104, 235411 (2021).
doi: 10.1103/PhysRevB.104.235411
Hansen, I. et al. Implementation of an advanced dressing protocol for global qubit control in silicon. Appl. Phys. Rev. 9, 031409 (2022).
doi: 10.1063/5.0096467
Hansen, I. et al. Pulse engineering of a global field for robust and universal quantum computation. Phys. Rev. A 104, 062415 (2021).
doi: 10.1103/PhysRevA.104.062415
Laucht, A. et al. A dressed spin qubit in silicon. Nat. Nanotechnol. 12, 61–66 (2017).
doi: 10.1038/nnano.2016.178
pubmed: 27749833
Vahapoglu, E. et al. Single-electron spin resonance in a nanoelectronic device using a global field. Sci. Adv. 7, eabg9158 (2021).
doi: 10.1126/sciadv.abg9158
pubmed: 34389538
pmcid: 8363148
Vahapoglu, E. et al. Coherent control of electron spin qubits in silicon using a global field. npj Quantum Inf. 8, 126 (2022).
doi: 10.1038/s41534-022-00645-w
Veldhorst, M. et al. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nat. Nanotechnol. 9, 981–985 (2014).
doi: 10.1038/nnano.2014.216
pubmed: 25305743
Fogarty, M. et al. Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout. Nat. Commun. 9, 4370 (2018).
doi: 10.1038/s41467-018-06039-x
pubmed: 30375392
pmcid: 6207676
Takeda, K. et al. A fault-tolerant addressable spin qubit in a natural silicon quantum dot. Sci. Adv. 2, e1600694 (2016).
doi: 10.1126/sciadv.1600694
pubmed: 27536725
pmcid: 4982751
Tanttu, T. et al. Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction. Phys. Rev. X 9, 021028 (2019).
Harvey-Collard, P. et al. Spin-orbit interactions for singlet-triplet qubits in silicon. Phys. Rev. Lett. 122, 217702 (2019).
doi: 10.1103/PhysRevLett.122.217702
pubmed: 31283344
Martinez, B. & Niquet, Y.-M. Variability of electron and hole spin qubits due to interface roughness and charge traps. Phys. Rev. Appl. 17, 024022 (2022).
doi: 10.1103/PhysRevApplied.17.024022
Tokura, Y., van der Wiel, W. G., Obata, T. & Tarucha, S. Coherent single electron spin control in a slanting zeeman field. Phys. Rev. Lett. 96, 047202 (2006).
doi: 10.1103/PhysRevLett.96.047202
pubmed: 16486882
Philips, S. G. J. et al. Universal control of a six-qubit quantum processor in silicon. Nature 609, 919–924 (2022).
doi: 10.1038/s41586-022-05117-x
pubmed: 36171383
pmcid: 9519456
Takeda, K. et al. Quantum tomography of an entangled three-qubit state in silicon. Nat. Nanotechnol. 16, 965–969 (2021).
doi: 10.1038/s41565-021-00925-0
pubmed: 34099899
Pioro-Ladriere, M. et al. Electrically driven single-electron spin resonance in a slanting zeeman field. Nat. Phys. 4, 776–779 (2008).
doi: 10.1038/nphys1053
Lawrie, W. I. L. et al. Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold. Nat. Commun. 14, 3617 (2023).
doi: 10.1038/s41467-023-39334-3
pubmed: 37336892
pmcid: 10279658
Hendrickx, N. W. et al. A four-qubit germanium quantum processor. Nature 591, 580–585 (2021).
doi: 10.1038/s41586-021-03332-6
pubmed: 33762771
Lawrie, W. I. L. et al. Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots. Nano Lett. 20, 7237–7242 (2020).
doi: 10.1021/acs.nanolett.0c02589
pubmed: 32833455
pmcid: 7564448
Jones, C. et al. Logical qubit in a linear array of semiconductor quantum dots. Phys. Rev. X 8, 021058 (2018).
Meunier, T., Calado, V. E. & Vandersypen, L. M. K. Efficient controlled-phase gate for single-spin qubits in quantum dots. Phys. Rev. B 83, 121403 (2011).
doi: 10.1103/PhysRevB.83.121403
Vallabhapurapu, H. H. et al. High-fidelity control of a nitrogen-vacancy-center spin qubit at room temperature using the sinusoidally modulated, always rotating, and tailored protocol. Phys. Rev. A 108, 022606 (2023).
doi: 10.1103/PhysRevA.108.022606
Ferdous, R. et al. Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability. Phys. Rev. B 97, 241401 (2018).
doi: 10.1103/PhysRevB.97.241401
Laucht, A. et al. High-fidelity adiabatic inversion of a 31P electron spin qubit in natural silicon. Appl. Phys. Lett. 104, 092115 (2014).
doi: 10.1063/1.4867905
Seedhouse, A. E. et al. Pauli blockade in silicon quantum dots with spin-orbit control. PRX Quantum 2, 010303 (2021).
doi: 10.1103/PRXQuantum.2.010303
Gilbert, W. et al. On-demand electrical control of spin qubits. Nat. Nanotechnol. 18, 131–136 (2023).
doi: 10.1038/s41565-022-01280-4
pubmed: 36635331
Loss, D. & DiVincenzo, D. P. Quantum computation with quantum dots. Phys. Rev. A 57, 120–126 (1998).
doi: 10.1103/PhysRevA.57.120
Petta, J. R. et al. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science 309, 2180–2184 (2005).
doi: 10.1126/science.1116955
pubmed: 16141370
He, Y. et al. A two-qubit gate between phosphorus donor electrons in silicon. Nature 571, 371–375 (2019).
doi: 10.1038/s41586-019-1381-2
pubmed: 31316197
Petit, L. et al. Design and integration of single-qubit rotations and two-qubit gates in silicon above one kelvin. Commun. Mater. 3, 82 (2022).
doi: 10.1038/s43246-022-00304-9
Sigillito, A. J., Gullans, M. J., Edge, L. F., Borselli, M. & Petta, J. R. Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates. npj Quantum Inf. 5, 110 (2019).
doi: 10.1038/s41534-019-0225-0
Watson, T. F. et al. A programmable two-qubit quantum processor in silicon. Nature 555, 633–637 (2018).
doi: 10.1038/nature25766
pubmed: 29443962
Xue, X. et al. Quantum logic with spin qubits crossing the surface code threshold. Nature 601, 343–347 (2022).
doi: 10.1038/s41586-021-04273-w
pubmed: 35046604
pmcid: 8770146
Huang, J. Y. et al. High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin. Nature 627, 772–777 (2024).
doi: 10.1038/s41586-024-07160-2
pubmed: 38538941
pmcid: 10972758
Ni, M. et al. A SWAP gate for spin qubits in silicon. Preprint at arXiv https://arxiv.org/pdf/2310.06700.pdf (2023).
Cifuentes, J. D. et al. Impact of electrostatic crosstalk on the spin qubits of dense CMOS architectures. Preprint at arXiv https://arxiv.org/pdf/2309.01849.pdf (2023).
Laucht, A. et al. Breaking the rotating wave approximation for a strongly driven dressed single-electron spin. Phys. Rev. B 94, 161302 (2016).
doi: 10.1103/PhysRevB.94.161302
Tanttu, T., Lim, W. H., Huang, J. Y. et al. Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots. Nat. Phys. (2024). https://doi.org/10.1038/s41567-024-02614-w .
Yang, C. H., Lim, W. H., Zwanenburg, F. A. & Dzurak, A. S. Dynamically controlled charge sensing of a few-electron silicon quantum dot. AIP Adv. 1, 042111 (2011).