Thin Film Stoichiometry and Defects Management for Low Threshold and Air Stable Near-Infrared Perovskite Laser.
defects
lasing
light emitting diodes
metal halide perovskites
shallow traps
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
12 Sep 2024
12 Sep 2024
Historique:
revised:
14
07
2024
received:
29
05
2024
medline:
15
9
2024
pubmed:
15
9
2024
entrez:
13
9
2024
Statut:
aheadofprint
Résumé
While significant efforts have been devoted to optimize the thin-film stoichiometry and processing of perovskites for applications in photovoltaic and light-emitting diodes, there is a noticeable lack of emphasis on tailoring them for lasing applications. In this study, it is revealed that thin films engineered for efficient light-emitting diodes, with passivation of deep and shallow trap states and a tailored energetic landscape directing carriers toward low-energy emitting states, may not be optimal for light amplification systems. Instead, amplified spontaneous emission (ASE) is found to be sustained by shallow defects, driven by the positive correlation between the ASE threshold and the ratio of carrier injection rate in the emissive state to the recombination rate of excited carriers. This insight has informed the development of an optimized perovskite thin film and laser device exhibiting a low threshold (≈ 60 µJ cm
Identifiants
pubmed: 39267373
doi: 10.1002/adma.202407652
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2407652Subventions
Organisme : Marie Skłodowska-Curie
ID : 101105123
Organisme : HORIZON EUROPE European Research Council
ID : 771528
Organisme : WOA Institution: Istituto Italiano di Tecnologia
Informations de copyright
© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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