Silicon Carbide: Material Growth, Device Processing, and Applications.


Journal

Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929

Informations de publication

Date de publication:
18 Sep 2024
Historique:
received: 29 08 2024
accepted: 09 09 2024
medline: 28 9 2024
pubmed: 28 9 2024
entrez: 28 9 2024
Statut: epublish

Résumé

The continuous demand for electronic devices operating at increasing current and power levels, as well as at high temperatures and in harsh environments, has driven research into wide-band gap (WBG) semiconductors over the last three decades [...].

Identifiants

pubmed: 39336312
pii: ma17184571
doi: 10.3390/ma17184571
pii:
doi:

Types de publication

Editorial

Langues

eng

Auteurs

Marilena Vivona (M)

Institute for Microelectronics and Microsystems, National Research Council of Italy, 95121 Catania, Italy.

Mike Jennings (M)

Centre for Integrative Semiconductor Materials (CISM), Swansea University, Swansea SA1 8EN, UK.

Classifications MeSH