Investigation of Persistent Photoconductivity of Gallium Nitride Semiconductor and Differentiation of Primary Neural Stem Cells.
GaN
Kelvin probe force microscopy
neural stem cells
semiconductor biointerface
Journal
Molecules (Basel, Switzerland)
ISSN: 1420-3049
Titre abrégé: Molecules
Pays: Switzerland
ID NLM: 100964009
Informations de publication
Date de publication:
19 Sep 2024
19 Sep 2024
Historique:
received:
20
07
2024
revised:
01
09
2024
accepted:
10
09
2024
medline:
28
9
2024
pubmed:
28
9
2024
entrez:
28
9
2024
Statut:
epublish
Résumé
A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices.
Identifiants
pubmed: 39339434
pii: molecules29184439
doi: 10.3390/molecules29184439
pii:
doi:
Substances chimiques
Gallium
CH46OC8YV4
gallium nitride
1R9CC3P9VL
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : National Natural Science Foundation of China
ID : 61674164
Organisme : National Natural Science Foundation of China
ID : 62164001
Organisme : National Natural Science Foundation of China
ID : 22004020
Organisme : the Natural Science Foundation of Jiangxi Province
ID : 20202ZDB01018
Organisme : the open project of the Key Laboratory of Prevention and Treatment of Cardiovascular and Cerebrovascular Diseases Ministry of Education of China
ID : XN201903
Organisme : the startup funds of high-level talents of Gannan Medical University
ID : QD201906
Organisme : the startup funds of high-level talents of Gannan Medical University
ID : QD202011
Organisme : the school level project of Gannan Medical University
ID : YB201942
Organisme : Special Fund for Graduate Innovation of Gannan Medical University
ID : YC2021-S802