Mechanisms of Defect-Mediated Memristive Behavior in MoS
2D materials
first-principles calculations
memristors
point defects
quantum transport
resistance switching
Journal
Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070
Informations de publication
Date de publication:
03 Oct 2024
03 Oct 2024
Historique:
medline:
4
10
2024
pubmed:
4
10
2024
entrez:
3
10
2024
Statut:
aheadofprint
Résumé
The switching dynamics of a Au∥V
Identifiants
pubmed: 39361515
doi: 10.1021/acs.nanolett.4c03792
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM