A transparent p-type semiconductor designed

Journal

Materials horizons
ISSN: 2051-6355
Titre abrégé: Mater Horiz
Pays: England
ID NLM: 101623537

Informations de publication

Date de publication:
04 Oct 2024
Historique:
medline: 4 10 2024
pubmed: 4 10 2024
entrez: 4 10 2024
Statut: aheadofprint

Résumé

Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap (

Identifiants

DOI: 10.1039/d4mh00985a PMID: 39363758
pubmed: 39363758
doi: 10.1039/d4mh00985a
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Seung Yong Lee (SY)

Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea. khlee2018@yonsei.ac.kr.
KIURI Institute, Yonsei University, Seoul 03722, Republic of Korea.

Inseo Kim (I)

Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea.

Hyun Jae Kim (HJ)

Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea. khlee2018@yonsei.ac.kr.
Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea. ohms@keti.re.kr.

Sangjun Sim (S)

Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea.

Jae-Hoon Lee (JH)

Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea.
Global Infra Technology, Samsung Electronics, Yongin 17113, Republic of Korea. kimoon.lee@kunsan.ac.kr.

Sora Yun (S)

Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea.

Joonho Bang (J)

School of Materials Science & Engineering, Gyeongsang National University, Jinju 52828, Republic of Korea.
ORCID: 0000-0002-9455-5378

Kyoung Won Park (KW)

Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea. ohms@keti.re.kr.
ORCID: 0000-0002-1830-6839

Chul Jong Han (CJ)

Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea. ohms@keti.re.kr.

Hyun-Min Kim (HM)

Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea.

Heesun Yang (H)

Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea.
ORCID: 0000-0002-2827-2070

Bongjae Kim (B)

Department of Physics, Kyungbuk National University, Daegu 41566, Republic of Korea.

Seongil Im (S)

Department of Physics, van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea.

Antonio Facchetti (A)

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. afacchetti6@gatech.edu.
ORCID: 0000-0002-8175-7958

Min Suk Oh (MS)

Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea. ohms@keti.re.kr.
ORCID: 0009-0003-2773-3239

Kyu Hyoung Lee (KH)

Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea. khlee2018@yonsei.ac.kr.
ORCID: 0000-0001-6843-6706

Kimoon Lee (K)

Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea.
The Institute of Basic Science, Kunsan National University, Gunsan 54150, Republic of Korea.
ORCID: 0000-0002-5989-5633

Classifications MeSH