Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.
Boron Nitride Nanotube
Boron vacancy
Magnetic field sensing
ODMR
Spin defects
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
10 Oct 2024
10 Oct 2024
Historique:
medline:
11
10
2024
pubmed:
11
10
2024
entrez:
11
10
2024
Statut:
aheadofprint
Résumé
Spin defects in hexagonal boron nitride (hBN) are emerging as promising platforms for quantum sensing applications. In particular, the negatively charged boron vacancy (
Identifiants
pubmed: 39390758
doi: 10.1021/acsami.4c12802
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM