Achieving the 1D Atomic Chain Limit in Van der Waals Crystals.

1D materials atomic chains van der Waals materials

Journal

Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358

Informations de publication

Date de publication:
14 Oct 2024
Historique:
revised: 22 09 2024
received: 09 07 2024
medline: 14 10 2024
pubmed: 14 10 2024
entrez: 14 10 2024
Statut: aheadofprint

Résumé

Experiments with graphene have demonstrated that 2D van der Waals materials can be stable, robust, and efficiently manipulated at the level of individual atomic planes. However, the stability and manipulation of 1D van der Waals materials and individual atomic chains remains elusive. Here, the ability to exfoliate and process two representative van der Waals materials containing 1D motifs, namely MoI

Identifiants

pubmed: 39400439
doi: 10.1002/adma.202409898
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2409898

Subventions

Organisme : Office of Naval Research
ID : N00014-21-1-2947
Organisme : US Department of Energy (DOE): Basic Energy Sciences
Organisme : NSF
ID : 2138259
Organisme : NSF
ID : 2138286
Organisme : NSF
ID : 2138307
Organisme : NSF
ID : 2137603
Organisme : NSF
ID : 2138296
Organisme : Basic Energy Sciences
ID : DE-SC0010378
Organisme : National Science Foundation
ID : DMR-1921958

Informations de copyright

© 2024 Wiley‐VCH GmbH.

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Auteurs

Jordan Teeter (J)

Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.

Na Yeon Kim (NY)

California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA.

Topojit Debnath (T)

Department of Electrical and Computer Engineering University of California, Riverside, CA, 92521, USA.

Nicholas Sesing (N)

Department of Chemistry, University of Georgia, Athens, Georgia, 30602, USA.

Tekwam Geremew (T)

Department of Electrical and Computer Engineering University of California, Riverside, CA, 92521, USA.

Dylan Wright (D)

Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.

Miaofang Chi (M)

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA.

Adam Z Stieg (AZ)

California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.

Jianwei Miao (J)

California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA.

Roger K Lake (RK)

Department of Electrical and Computer Engineering University of California, Riverside, CA, 92521, USA.

Tina Salguero (T)

Department of Chemistry, University of Georgia, Athens, Georgia, 30602, USA.

Alexander A Balandin (AA)

Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
Center for Quantum Science and Engineering, University of California, Los Angeles, CA, 90095, USA.

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