Strong Grain Boundary Passivation Effect of Coevaporated Dopants Enhances the Photoemission of Lead Halide Perovskites.

coevaporated dopants grain-boundaries passivation perovskite photoluminescence recombination traps

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
22 Oct 2024
Historique:
medline: 23 10 2024
pubmed: 23 10 2024
entrez: 22 10 2024
Statut: aheadofprint

Résumé

Herein, we demonstrate that coevaporated dopants provide a means to passivate buried interfacial defects occurring at perovskite grain boundaries in evaporated perovskite thin films, thus giving rise to an enhanced photoluminescence. By means of an extensive photophysical characterization, we provide experimental evidence that indicate that the codopant acts mainly at the grain boundaries. They passivate interfacial traps and prevent the formation of photoinduced deep traps. On the other hand, the presence of an excessive amount of organic dopant can lead to a barrier for carrier diffusion. Hence, the passivation process demands a proper balance between the two effects. Our analysis on the role of the dopant, performed under different excitation regimes, permits evaluation of the performance of the material under conditions more adapted to photovoltaic or light emitting applications. In this context, the approach taken herein provides a screening method to evaluate the suitability of a passivating strategy prior to its incorporation into a device.

Identifiants

pubmed: 39438017
doi: 10.1021/acsami.4c13434
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Isabella A Kalluvila Justin (IA)

Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.

David O Tiede (DO)

Instituto de Ciencias de Materiales de Sevilla (Consejo Superior de Investigaciones Científicas-Universidad de Sevilla), C/Américo Vespucio, 49, Sevilla 41092, Spain.

Manuel Piot (M)

Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.

Michele Forzatti (M)

Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.

Cristina Roldán-Carmona (C)

Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.

Juan F Galisteo-López (JF)

Instituto de Ciencias de Materiales de Sevilla (Consejo Superior de Investigaciones Científicas-Universidad de Sevilla), C/Américo Vespucio, 49, Sevilla 41092, Spain.

Hernán Míguez (H)

Instituto de Ciencias de Materiales de Sevilla (Consejo Superior de Investigaciones Científicas-Universidad de Sevilla), C/Américo Vespucio, 49, Sevilla 41092, Spain.

Henk J Bolink (HJ)

Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltrán 2, Paterna 46980, Spain.

Classifications MeSH