Bottom-up Cu filling of annular through silicon vias: Microstructure and texture.

Bottom-up filling Copper Crystallographic texture EBSD Microstructure TSV

Journal

Electrochimica acta
ISSN: 0013-4686
Titre abrégé: Electrochim Acta
Pays: United States
ID NLM: 9875994

Informations de publication

Date de publication:
Mar 2020
Historique:
medline: 1 3 2020
pubmed: 1 3 2020
entrez: 31 10 2024
Statut: ppublish

Résumé

Microstructural and morphological evolution during bottom-up Cu filling of annular through silicon vias (TSV) in a CuSO

Identifiants

DOI: 10.1016/j.electacta.2020.135612 PMID: 39478848 PMC: PMC11523005
pubmed: 39478848
doi: 10.1016/j.electacta.2020.135612
pmc: PMC11523005
doi:

Types de publication

Journal Article

Langues

eng

Auteurs

Sang-Hyeok Kim (SH)

Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, South Korea.

Hyo-Jong Lee (HJ)

Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, South Korea.

Daniel Josell (D)

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Thomas P Moffat (TP)

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Classifications MeSH