Electrical and Structural Properties of the Partial Ternary Thin-Film System Ni-Si-B.
silicides
sputtering
structure−property relationships
thin films
work function
Journal
ACS combinatorial science
ISSN: 2156-8944
Titre abrégé: ACS Comb Sci
Pays: United States
ID NLM: 101540531
Informations de publication
Date de publication:
08 04 2019
08 04 2019
Historique:
pubmed:
23
2
2019
medline:
21
12
2019
entrez:
22
2
2019
Statut:
ppublish
Résumé
High-throughput and combinatorial materials science methods were used to investigate the dependence of the work function in the Ni-Si system on the B content (0-30 at. %). Alloying of NiSi is used to adapt its properties to suit the needs as a gate electrode material. Thin-film materials libraries were fabricated and investigated with respect to their structural and electrical properties. Further the work function values of selected samples in the region of interest were analyzed. The results show that the work function can be adjusted between 4.86 eV (B = 4.2 at. %) and 5.16 eV (B = 29.2 at. %) for (NiSi)B
Identifiants
pubmed: 30790519
doi: 10.1021/acscombsci.8b00175
doi:
Substances chimiques
Small Molecule Libraries
0
Nickel
7OV03QG267
Boron
N9E3X5056Q
Silicon
Z4152N8IUI
Types de publication
Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Langues
eng
Sous-ensembles de citation
IM