Enhancing the magnetic relaxivity of MRI contrast agents via the localized superacid microenvironment of graphene quantum dots.

Dual-modal contrast agents Graphene oxide quantum dots Localized superacid microenvironment Magnetic resonance imaging Tumor-targeting imaging

Journal

Biomaterials
ISSN: 1878-5905
Titre abrégé: Biomaterials
Pays: Netherlands
ID NLM: 8100316

Informations de publication

Date de publication:
08 2020
Historique:
received: 12 12 2019
revised: 21 03 2020
accepted: 14 04 2020
pubmed: 28 4 2020
medline: 15 5 2021
entrez: 28 4 2020
Statut: ppublish

Résumé

The design of contrast agents (CAs) with high magnetic relaxivities is a key issue in the field of magnetic resonance imaging (MRI). The traditional strategy employed is aimed at optimizing the structural design of the magnetic atoms in the CA. However, it is difficult to obtain an agent with magnetic relaxivity over 100 mM

Identifiants

pubmed: 32339859
pii: S0142-9612(20)30302-1
doi: 10.1016/j.biomaterials.2020.120056
pii:
doi:

Substances chimiques

Contrast Media 0
Graphite 7782-42-5

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

120056

Informations de copyright

Copyright © 2020 Elsevier Ltd. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Yongqiang Li (Y)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; CAS Center for ExcelleNce in Superconducting Electronics (CENSE), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; University of Chinese Academy of Sciences (UCAS), Beijing, 100049, PR China.

Hui Dong (H)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; CAS Center for ExcelleNce in Superconducting Electronics (CENSE), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; University of Chinese Academy of Sciences (UCAS), Beijing, 100049, PR China. Electronic address: donghui@mail.sim.ac.cn.

Quan Tao (Q)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; CAS Center for ExcelleNce in Superconducting Electronics (CENSE), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China.

Caichao Ye (C)

Academy for Advanced Interdisciplinary Studies and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, PR China.

Mengmeng Yu (M)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; CAS Center for ExcelleNce in Superconducting Electronics (CENSE), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; University of Chinese Academy of Sciences (UCAS), Beijing, 100049, PR China.

Jipeng Li (J)

Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai, 200011, PR China.

Huifang Zhou (H)

Department of Ophthalmology, Shanghai Ninth People's Hospital, Shanghai, 200011, PR China.

Siwei Yang (S)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China. Electronic address: yangsiwei@mail.sim.ac.cn.

Guqiao Ding (G)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; University of Chinese Academy of Sciences (UCAS), Beijing, 100049, PR China. Electronic address: gqding@mail.sim.ac.cn.

Xiaoming Xie (X)

State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; CAS Center for ExcelleNce in Superconducting Electronics (CENSE), Chinese Academy of Sciences (CAS), Shanghai, 200050, PR China; University of Chinese Academy of Sciences (UCAS), Beijing, 100049, PR China.

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Classifications MeSH