Silicon deposition on guard cells increases stomatal sensitivity as mediated by K
Journal
Physiologia plantarum
ISSN: 1399-3054
Titre abrégé: Physiol Plant
Pays: Denmark
ID NLM: 1256322
Informations de publication
Date de publication:
Mar 2021
Mar 2021
Historique:
received:
30
06
2020
revised:
27
08
2020
accepted:
01
09
2020
pubmed:
4
9
2020
medline:
26
2
2021
entrez:
4
9
2020
Statut:
ppublish
Résumé
Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol to impose physiological drought (osmotic stress). Scanning electron microscopy in conjunction with X-ray mapping found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e. increased stomatal sensitivity) and an increased efflux of guard cell K
Substances chimiques
Abscisic Acid
72S9A8J5GW
Silicon
Z4152N8IUI
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
358-370Subventions
Organisme : Australian Research Council
ID : DP170102278
Informations de copyright
© 2020 Scandinavian Plant Physiology Society.
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