Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias.
Journal
Journal of the Electrochemical Society
ISSN: 0013-4651
Titre abrégé: J Electrochem Soc
Pays: England
ID NLM: 7505603
Informations de publication
Date de publication:
2019
2019
Historique:
entrez:
8
10
2020
pubmed:
1
1
2019
medline:
1
1
2019
Statut:
ppublish
Résumé
Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether-Cl
Types de publication
Journal Article
Langues
eng
Subventions
Organisme : Intramural NIST DOC
ID : 9999-NIST
Pays : United States
Références
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pubmed: 29578694
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pubmed: 11890754
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pubmed: 18785722
J Chem Phys. 2005 Jun 22;122(24):244914
pubmed: 16035823