Analysis of Electric Field Distribution for SOI-FET Sensors with Dielectrophoretic Control.
biosensor
dielectrophoresis
field-effect transistor
Journal
Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366
Informations de publication
Date de publication:
23 Mar 2022
23 Mar 2022
Historique:
received:
31
01
2022
revised:
11
03
2022
accepted:
17
03
2022
entrez:
12
4
2022
pubmed:
13
4
2022
medline:
14
4
2022
Statut:
epublish
Résumé
Silicon-on-insulator (SOI) nanowire or nanoribbon field-effect transistor (FET) biosensors are versatile platforms of electronic detectors for the real-time, label-free, and highly sensitive detection of a wide range of bioparticles. At a low analyte concentration in samples, the target particle diffusion transport to sensor elements is one of the main limitations in their detection. The dielectrophoretic (DEP) manipulation of bioparticles is one of the most successful techniques to overcome this limitation. In this study, TCAD modeling was used to analyze the distribution of the gradient of the electric fields E for the SOI-FET sensors with embedded DEP electrodes to optimize the conditions of the dielectrophoretic delivery of the analyte. Cases with asymmetrical and symmetrical rectangular electrodes with different heights, widths, and distances to the sensor, and with different sensor operation modes were considered. The results showed that the grad
Identifiants
pubmed: 35408075
pii: s22072460
doi: 10.3390/s22072460
pmc: PMC9003046
pii:
doi:
Substances chimiques
Nanotubes, Carbon
0
Silicon
Z4152N8IUI
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
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