Highly stretchable organic electrochemical transistors with strain-resistant performance.


Journal

Nature materials
ISSN: 1476-4660
Titre abrégé: Nat Mater
Pays: England
ID NLM: 101155473

Informations de publication

Date de publication:
05 2022
Historique:
received: 01 05 2021
accepted: 22 03 2022
pubmed: 3 5 2022
medline: 6 5 2022
entrez: 2 5 2022
Statut: ppublish

Résumé

Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10

Identifiants

pubmed: 35501364
doi: 10.1038/s41563-022-01239-9
pii: 10.1038/s41563-022-01239-9
doi:

Substances chimiques

Polymers 0
Thiophenes 0

Types de publication

Journal Article Research Support, U.S. Gov't, Non-P.H.S. Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

564-571

Commentaires et corrections

Type : CommentIn

Informations de copyright

© 2022. The Author(s), under exclusive licence to Springer Nature Limited.

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Auteurs

Jianhua Chen (J)

Department of Chemical Science and Technology, Yunnan University, Kunming, P. R. China.
Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
Department of Materials Science and Engineering and the Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), Shenzhen, P. R. China.

Wei Huang (W)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. whuang@uestc.edu.cn.
School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China. whuang@uestc.edu.cn.

Ding Zheng (D)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. ding.zheng@northwestern.edu.

Zhaoqian Xie (Z)

State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, Dalian University of Technology, Dalian, P. R. China. zxie@dlut.edu.cn.
Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, P. R. China. zxie@dlut.edu.cn.
Ningbo Institute, Dalian University of Technology, Ningbo, P. R. China. zxie@dlut.edu.cn.

Xinming Zhuang (X)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.

Dan Zhao (D)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.

Yao Chen (Y)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.

Ning Su (N)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.

Hongming Chen (H)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.

Robert M Pankow (RM)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.

Zhan Gao (Z)

Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, P. R. China.

Junsheng Yu (J)

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.

Xugang Guo (X)

Department of Materials Science and Engineering and the Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), Shenzhen, P. R. China.

Yuhua Cheng (Y)

School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.

Joseph Strzalka (J)

X-ray Science Division, Argonne National Laboratory, Argonne, IL, USA.

Xinge Yu (X)

Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, P. R. China. xingeyu@cityu.edu.hk.

Tobin J Marks (TJ)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. t-marks@northwestern.edu.

Antonio Facchetti (A)

Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. a-facchetti@northwestern.edu.
Flexterra Inc., Skokie, IL, USA. a-facchetti@northwestern.edu.
Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, Norrköping, Sweden. a-facchetti@northwestern.edu.

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