Graded 2D/3D Perovskite Hetero-Structured Films with Suppressed Interfacial Recombination for Efficient and Stable Solar Cells via DABr Treatment.

2D capped 3D perovskite DABr-treatment diethylammonium bromide resilient surface treatment

Journal

Molecules (Basel, Switzerland)
ISSN: 1420-3049
Titre abrégé: Molecules
Pays: Switzerland
ID NLM: 100964009

Informations de publication

Date de publication:
07 Feb 2023
Historique:
received: 11 01 2023
revised: 31 01 2023
accepted: 01 02 2023
entrez: 25 2 2023
pubmed: 26 2 2023
medline: 26 2 2023
Statut: epublish

Résumé

Several strategies and approaches have been reported for improving the resilience and optoelectronic properties of perovskite films. However, fabricating a desirable and stable perovskite absorber layer is still a great challenge due to the optoelectronic and fabrication limitations of the materials. Here, we introduce diethylammonium bromide (DABr) as a post-treatment material for the pre-deposited methylammonium lead iodide (MAPbI

Identifiants

pubmed: 36838581
pii: molecules28041592
doi: 10.3390/molecules28041592
pmc: PMC9964978
pii:
doi:

Substances chimiques

perovskite 12194-71-7
Bromides 0
Calcium Compounds 0
Oxides 0

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Subventions

Organisme : National Key R&D Program of China
ID : 2018YFB1500102
Organisme : Zhejiang Provincial Natural Science Foundation of China
ID : LQ18F040002, LY17F040001
Organisme : Zhejiang Provincial Key Laboratory
ID : 2013E10022
Organisme : the Key Research and Development Program of Zhejiang Province
ID : 2021C01006
Organisme : Scientific Research Fund of Zhejiang Provincial Education Department
ID : Y202147258

Références

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Auteurs

Muhammad Mateen (M)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Hongxi Shi (H)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Hao Huang (H)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Ziyu Li (Z)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Waseem Ahmad (W)

Division of Science and Technology, Department of Physics, University of Education Campus Dera Ghazi Khan, Multan 32200, Pakistan.

Muhammad Rafiq (M)

Institute of Biomedical Materials and Engineering, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, China.

Usman Ali Shah (UA)

Department of Physics and Astronomy, University of Florence, Via Giovanni Sansone 1, I-50019 Sesto Fiorentino, Italy.

Sajid Sajid (S)

Department of Chemical & Petroleum Engineering, United Arab Emirates University, Al Ain P.O. Box 15551, United Arab Emirates.

Yingke Ren (Y)

Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China.

Jongee Park (J)

Department of Metallurgical and Materials Engineering, Atilim University, Ankara 06836, Turkey.

Dan Chi (D)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Zhangbo Lu (Z)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

Shihua Huang (S)

Provincial Key Laboratory of Solid-State Optoelectronic Devices, Zhejiang Normal University, Jinhua 321004, China.

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Classifications MeSH