Stearic acid mediated growth of edge-on oriented bilayer poly(3-hexylthiophene) Langmuir films.

3D to 2D transition Atomic force microscopy Conjugated polymers Edge-on orientation Fatty acid blending Langmuir and LB films Ordering and layering X-ray reflectivity

Journal

Journal of colloid and interface science
ISSN: 1095-7103
Titre abrégé: J Colloid Interface Sci
Pays: United States
ID NLM: 0043125

Informations de publication

Date de publication:
15 Jan 2022
Historique:
received: 15 06 2021
revised: 05 08 2021
accepted: 12 08 2021
pubmed: 7 9 2021
medline: 10 11 2021
entrez: 6 9 2021
Statut: ppublish

Résumé

The growth and structural evolution of stearic acid (SA) blended poly(3-hexylthiophene) [P3HT] Langmuir and Langmuir-Blodgett (LB) films were studied using complimentary surface and interface sensitive techniques to understand the possibility of ordering and layering of promising charge carrier mobility polymers, at the air-water interface and on the transferred solid substrate. SA-induced and subsequent compression-induced transitions in P3HT structure, from aggregated-3D to soft-2D and from in-plane mixed to unmixed layer, are evident at low and high pressures, respectively. The blending of SA molecules enhances the amphiphilic character of P3HT, which reduces the extent of the out-of-plane aggregation to form edge-on oriented (EO) bottom side-chain folded-bilayer (f-BL) islands (of size ~60 nm) within SA monolayer (ML), of commensurate thickness (~2.6 nm). Further compression, gradually rejects the less hydrophilic f-BL islands from the mixed layer to form EO P3HT BL islands (of coverage in-tune with starting composition) on top of SA ML. The formation of nearly covered P3HT(BL)/SA(ML) structured film on solid substrate is evident for the first time, which (even of limited P3HT thickness) has immense importance in the device properties, as the current in the bottom-gated organic thin-film transistors is known to travel only within few ML region near gate-dielectric.

Identifiants

pubmed: 34487934
pii: S0021-9797(21)01311-4
doi: 10.1016/j.jcis.2021.08.071
pii:
doi:

Substances chimiques

Stearic Acids 0
Thiophenes 0
poly(3-hexylthiophene) 0
stearic acid 4ELV7Z65AP

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1153-1162

Informations de copyright

Copyright © 2021 Elsevier Inc. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Auteurs

Saugata Roy (S)

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India.

Md Saifuddin (M)

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India.

Subhankar Mandal (S)

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India.

Satyajit Hazra (S)

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India. Electronic address: satyajit.hazra@saha.ac.in.

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Classifications MeSH