A Comprehensive Characterization of the TI-LGAD Technology.

Silicon
4D-pixels 4D-tracking LGAD TI-LGAD space resolution time resolution

Journal

Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366

Informations de publication

Date de publication:
07 Jul 2023
Historique:
received: 02 06 2023
revised: 30 06 2023
accepted: 05 07 2023
medline: 17 7 2023
pubmed: 14 7 2023
entrez: 14 7 2023
Statut: epublish

Résumé

Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that the active area or

Identifiants

DOI: 10.3390/s23136225 PMID: 37448076 PMC: PMC10346973
pubmed: 37448076
pii: s23136225
doi: 10.3390/s23136225
pmc: PMC10346973
pii:
doi:

Substances chimiques

Silicon Z4152N8IUI

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Subventions

Organisme : European Union's Horizon 2020 Research and Innovation
ID : 101004761

Auteurs

Matias Senger (M)

Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.
ORCID: 0000-0002-1992-5711

Anna Macchiolo (A)

Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.

Ben Kilminster (B)

Physics Institute, University of Zurich, Irchel Campus, 8057 Zurich, Switzerland.

Giovanni Paternoster (G)

Fondazione Bruno Kessler (FBK), 38123 Trento, Italy.

Matteo Centis Vignali (M)

Fondazione Bruno Kessler (FBK), 38123 Trento, Italy.

Giacomo Borghi (G)

Campus Leonardo, Politecnico di Milano, 20133 Milan, Italy.
ORCID: 0000-0001-8488-4728

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Classifications MeSH

questionsmedicales.fr › Produits chimiques inorganiques › Éléments › Métalloïdes › Silicium › A Comprehensive Characterization of the...